Design for Manufacturability and Statistical Design: A - download pdf or read online

By Michael Orshansky

ISBN-10: 0387309284

ISBN-13: 9780387309286

ISBN-10: 0387690115

ISBN-13: 9780387690117

Design for Manufacturability and Statistical layout: A confident Approach offers a radical therapy of the factors of variability, tools for statistical information characterization, and strategies for modeling, research, and optimization of built-in circuits to enhance yield. the target of the optimistic strategy built during this ebook is to formulate a constant set of equipment and rules worthy for rigorous statistical layout and layout for manufacturability from gadget physics to large-scale circuit optimization. The segments of the ebook are dedicated, respectively, to

  • understanding the factors of variability;
  • design of attempt buildings for variability characterization;
  • statistically rigorous facts analysis;
  • techniques of layout for manufacturability in lithography and in chemical mechanical polishing;
  • statistical simulation, research, and optimization innovations for bettering parametric yield.

Design for Manufacturability and Statistical layout: A confident Approach offers an outline of the tools that have to be mastered for cutting-edge layout for manufacturability and statistical layout methodologies. it's an enormous reference for practitioners and scholars within the box of computer-aided layout of built-in circuits.

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Sample text

The precise impact of this uncertainty in the number and the placement of dopant atoms on the threshold voltage depends heavily on the specifics of the doping profile used in a MOSFET. Because the actual magnitude of uncertainty depends very much on the specifics of the doping profile, numerical simulations often must be used. For each lattice site, these programs compute a probability of its being a dopant, which can be found from the continuum doping concentration. 4 THRESHOLD VOLTAGE VARIABILITY 31 Fig.

Secondly, the thickness of the silicon body now has an influence on Vth , and thus variability in body thickness contributes to the variability in Vth . 38 2 FRONT END VARIABILITY Fig. 20. Impact on mobility is dependent on the size of active area. The trends are opposite for NMOS and PMOS devices. (Reprinted from [45], c 2003 IEEE). One of the most interesting practical alternative to the traditional planar MOS transistor is a dual-gate transistor, such as FinFET [46]. Planar MOSFET has one-sided control over the channel and has high leakage.

Their impact on the design will continue to grow requiring a substantial change in the design approaches and practices. 3 BACK END VARIABILITY We must beat the iron while it is hot, but we may polish it at leisure. 1 INTRODUCTION The back end of the IC fabrication process refers to the steps which form the interconnect or wiring for the circuit, as well as any passive devices such as integrated inductors or capacitors formed within the interconnect process layers. Because the back end process shares many technologies and tools with the front end, many of the variations affecting the front end are also operative here, particularly those related to lithography and etch.

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Design for Manufacturability and Statistical Design: A Constructive Approach by Michael Orshansky

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