New PDF release: Crystal Growth from the Melt

By G. Müller (auth.)

ISBN-10: 3642732089

ISBN-13: 9783642732089

ISBN-10: 3642732100

ISBN-13: 9783642732102

1 The content material ofthis article is predicated on a German publication model ) which seemed on the finish of the yr 1986. the writer attempted to include - so far as attainable - new vital effects released within the final 12 months. however the literature within the box of "convection and inhomogeneities in crystal progress from the soften" has elevated quite a bit meanwhile that the reader and the collegues may still make allowance for any incompleteness, additionally within the case that their very important contributions haven't been pointed out. this is able to for instance carry for difficulties on the topic of the Czochralski development. yet specially for this subject the reader should be refered to the coming near near quantity of this sequence, which includes specified contributions on "Surface rigidity pushed circulation in Crystal development Melts" by way of D. Schwabe and on "Convection in Czochralski Melts" by means of M. Mihelcic, W. Uelhoff, H. Wenzl and ok. Wingerath. The training of this manuscript has been supported through numerous ladies whose assistance is gratefully stated via the autor: Mrs. Gisela Neuner for the kind writing, Mrs. Abigail Sanders, Mrs. Fiona Eels and particularly Prof. Nancy Haegel for his or her assist in questions of the English language and Mrs. Christa Weber for interpreting corrections. additionally the nice cooperation with the Springer Verlag, particularly Mrs. Bohlen and with the handling editor of Crystals, Prof. H. C. Freyhardt, who seriously learn the manuscript, is acknowledged.

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3Sa-d. 7 (H20) at Ra = 50,00046 ). Velocity fields: (a) e = 0° (maximum dimensionless velocity vma/{x/h) = 134); (c) e = 90° (vrna/{xlh)) = 85. c. 0 I N 1 , , \ \ '" ,/ 1 / 'I" '" , \ \ \ ... ". ;- 1 1 I 1 / f r / I t / I t o "- "\ Ro= soooe , t 1 1 I , , , , , . 5 ~ \ - , , .. , - .. , ... . . 5 (8= 270°) ,I \ . radius r '" 1 1 ... , "- \ \ \ ~ '" , . c. 21 . c. o. 5 (8 - '" .... -1 \ . - -- -- -- -- - . I / / J J J · o. 5 I ---- - - -, --, . Lateral Segregation , , . , \ • \ I , , ... o \ ....

Shape of the phase boundary or seed orientation. g. 57). g. donors and acceptors) can be influenced in semiconductors by the position of the Fermi level. In the case where the considered impurity dominates, with respect to the concentration (C s), k can only be defined if Cs < nj (nj is the intrinsic carrier concentration of the semiconductor at the growth temperature). Experimental proofs for these conditions can be found in the literature. For example, in the liquid phase epitaxy of Ge doped GaAs at 900 °C58) and the vapor phase epitaxy 26 Segregation and Distribution Coefficients shape of the phase boundary growth rate mm/min 6 resistivity ~ mm 5 4 ~ 10 ~ 1ohmem ~ ~ 3 growth directio~ l~ , o 8 , 16 24 mm ~ 2 a 8 16 24 mm position across wafer Fig.

28. Distance).. -2) versus R. The different curves represent results of experiments under different conditions of the convective transport, characterized by the parameter 1115 •78 ) • 11 ~ 1: microgravity experiments (1. 6: vertical Bridgman configuration with top seeding at 5 to 30 times gravity on a centrifuge discussion on convective effects. ) by using the parameter I:!. which has been defined in Eq. (27). 3,74) and the extended Jackson and Hunt modeC7). , which have been evaluated according t073 , 74), demonstrating the convective influence on the fiber spacing.

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Crystal Growth from the Melt by G. Müller (auth.)


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